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US Patent 11935576 Semiconductor device performing row hammer refresh operation

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119355760
Patent Inventor Names
Takuya Nakanishi0
Toru Ishikawa0
Shinji Bessho0
Date of Patent
March 19, 2024
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Patent Application Number
176507970
Date Filed
February 11, 2022
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Patent Citations
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US Patent 7187607 Semiconductor memory device and method for manufacturing same
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US Patent 7203113 Semiconductor storage device
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US Patent 7203115 Semiconductor memory and method for operating the same
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US Patent 7209402 Semiconductor memory
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US Patent 7215588 Apparatus for controlling self-refresh period in memory device
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US Patent 7444577 Memory device testing to support address-differentiated refresh rates
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US Patent 7551502 Semiconductor device
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US Patent 7565479 Memory with refresh cycle donation to accommodate low-retention-storage rows
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...
Patent Citations Received
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US Patent 12112787 Apparatuses and methods for access based targeted refresh operations
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US Patent 12125514 Apparatuses and methods for access based refresh operations
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Patent Primary Examiner
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Tha-O H Bui
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CPC Code
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G11C 11/4087
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G11C 11/40615
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G11C 11/4076
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Patent abstract

An apparatus includes a memory cell array including a plurality of word lines each coupled to a plurality of memory cells, and a control circuit which is configured to activate first and second internal signals in a time-division manner in response to a first external command A first number of the word lines arc selected in response to the first internal signal, and a second number of the word line is selected in response to the second internal signal. The second number is smaller than the first number.

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