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US Patent 11916355 Narrow beam divergence semiconductor sources

Patent 11916355 was granted and assigned to Princeton Optronics on February, 2024 by the United States Patent and Trademark Office.

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Is a

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Patent attributes

Patent Applicant

Princeton Optronics

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Current Assignee

Princeton Optronics

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Robert Van Leeuwen0

Chuni Ghosh0

Jean-Francois Seurin0

Date of Patent

February 27, 2024

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Patent Application Number

169578560

Date Filed

December 26, 2018

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Patent Primary Examiner

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CPC Code

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Patent abstract

Narrow beam divergence semiconductor sources are operable to generate a beam having a substantially narrow beam divergence, an emission wavelength, and a substantially uniform beam intensity. The presence of an extended length mirror can help suppress one or more longitudinal and/or transverse modes such that the beam divergence and/or the spectral width of emission is substantially reduced.

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