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US Patent 11908740 Semiconductor structure with doped via plug

Patent 11908740 was granted and assigned to Taiwan Semiconductor Manufacturing Company on February, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
1
Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
1
Date Filed
November 25, 2022
1
Date of Patent
February 20, 2024
1
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
1
Patent Application Number
17994153
1
Patent Citations
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US Patent 8358007 Integrated circuit system employing low-k dielectrics and method of manufacture thereof
1
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US Patent 9082824 Method for forming an electrical connection between metal layers
1
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US Patent 9412660 Methods of forming V0 structures for semiconductor devices that includes recessing a contact structure
1
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US Patent 9711452 Optimized wires for resistance or electromigration
1
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US Patent 9899327 Surface treatment for semiconductor structure
1
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US Patent 9947621 Structure and method to reduce copper loss during metal cap formation
1
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US Patent 10103098 Semiconductor devices including a through via structure and methods of forming the same
1
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US Patent 10128148 Methods for fabricating semiconductor devices including surface treatment processes
1
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US Patent 11515206 Semiconductor structure with doped via plug
1
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US Patent 10157786 Selective formation of metallic films on metallic surfaces
1
•••
Patent Inventor Names
Jing-Huei Huang
1
Jie-Huang Huang
1
Huicheng Chang
1
Lun-Kuang Tan
1
Tung-Po Hsieh
1
Kuo-Ju Chen
1
Su-Hao Liu
1
Liang-Yin Chen
1
Hong-Chih Liu
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
11908740
1
Patent Primary Examiner
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David A Zarneke
1
CPC Code
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H01L 21/823431
1
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H01L 21/823821
1
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H01L 21/76897
1
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H01L 21/76816
1
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H01L 21/823475
1

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