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US Patent 11886124 Flows of optimization for patterning processes

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Is a
Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118861240
Patent Inventor Names
Duan-Fu Stephen Hsu0
Date of Patent
January 30, 2024
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Patent Application Number
179713610
Date Filed
October 21, 2022
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Patent Citations
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US Patent 11137690 Flows of optimization for patterning processes
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US Patent 11480882 Flows of optimization for patterning processes
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US Patent 7003758 System and method for lithography simulation
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US Patent 7587704 System and method for mask verification using an individual mask error model
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US Patent 7703069 Three-dimensional mask model for photolithography simulation
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US Patent 8200468 Methods and system for lithography process window simulation
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US Patent 8584056 Fast freeform source and mask co-optimization method
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Patent Primary Examiner
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Peter B. Kim
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CPC Code
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G03F 1/70
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G03F 7/20
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G03F 1/24
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G03F 7/70441
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G03F 7/705
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G03F 7/70125
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G03F 1/36
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Patent abstract

A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

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