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US Patent 11877080 Pixel sensor having shared readout structure

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
118770800
Patent Inventor Names
Xinqiao Liu0
Tsung-Hsun Tsai0
Song Chen0
Date of Patent
January 16, 2024
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Patent Application Number
175380920
Date Filed
November 30, 2021
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Patent Citations
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US Patent 7659925 High speed CMOS image sensor circuits with memory readout
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US Patent 10917589 Digital pixel with extended dynamic range
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US Patent 10923523 Multi-photodiode pixel cell
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US Patent 10931884 Pixel sensor having adaptive exposure time
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US Patent 10951849 Digital pixel image sensor
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US Patent 11057581 Digital pixel array with multi-stage readouts
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US Patent 11089210 Configurable image sensor
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US Patent 11089241 Pixel cell with multiple photodiodes
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...
Patent Primary Examiner
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Gevell V Selby
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CPC Code
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G02B 2027/0178
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H04N 5/378
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H04N 5/3745
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H04N 5/2353
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H01L 27/14643
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G02B 27/0172
0
Patent abstract

An apparatus comprises a first photodiode, a second photodiode, a quantizer, a memory, and a controller configured to: set a first exposure period in which the first photodiode generates a first charge; set a second exposure period in which the second photodiode generates a second charge, the second exposure period being set based on the first exposure period and at least one of: a first time associated with a read out operation of the memory to a second apparatus, or a second time associated with a quantization operation by the quantizer; perform, using the quantizer, the first quantization operation of the first charge to generate a first digital output; and perform, using the quantizer, a second quantization operation of the second charge to generate a second digital output.

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