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US Patent 11870006 Enhanced efficiency of LED structure with n-doped quantum barriers

Patent 11870006 was granted and assigned to Vuereal Inc. on January, 2024 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Vuereal
Vuereal
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Current Assignee
Vuereal
Vuereal
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118700060
Patent Inventor Names
Gholamreza Chaji0
Dayan Ban0
Jian Yin0
Ehsanollah Fathi0
Date of Patent
January 9, 2024
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Patent Application Number
170731360
Date Filed
October 16, 2020
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Patent Citations
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US Patent 9166098 Nitride semiconductor light emitting device
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US Patent 10483430 Micron-sized light emitting diode designs
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Patent Primary Examiner
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Savitri Mulpuri
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CPC Code
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H01L 33/32
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H01L 33/30
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H01L 33/145
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H01L 33/06
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H01L 33/025
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H01L 33/007
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H01L 33/0066
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Patent abstract

The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.

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