US Patent 11869977 Semiconductor device
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US Patent 11869977 Semiconductor device
Article
Patent abstract
A semiconductor device that can operate at high speed or having high strength against stress is provided. One embodiment of the present invention is a semiconductor device including a semiconductor film including a channel formation region and a pair of impurity regions between which the channel formation region is positioned; agate electrode overlapping side and top portions of the channel formation region with an insulating film positioned between the gate electrode and the side and top portions; and a source electrode and a drain electrode in contact with side and top portions of the pair of impurity regions.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Shunpei Yamazaki0
Date of Patent
January 9, 2024
0Patent Application Number
179825660
Date Filed
November 8, 2022
0Patent Citations
0
Patent Primary Examiner
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