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US Patent 11863183 Low power non-linear polar material based threshold logic gate multiplier

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
118631831
Patent Inventor Names
Robert Menezes1
Amrita Mathuriya1
Yuan-Sheng Fang1
Rajeev Kumar Dokania1
Ramamoorthy Ramesh1
Sasikanth Manipatruni1
Gaurav Thareja1
Date of Patent
January 2, 2024
1
Patent Application Number
175031241
Date Filed
October 15, 2021
1
Patent Citations
‌
US Patent 8247855 Enhanced local interconnects employing ferroelectric electrodes
1
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US Patent 9276040 Majority- and minority-gate logic schemes based on magneto-electric devices
1
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US Patent 9324405 CMOS analog memories utilizing ferroelectric capacitors
1
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US Patent 9697882 Analog ferroelectric memory with improved temperature range
1
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US Patent 9858979 Reprogrammable non-volatile ferroelectric latch for use with a memory controller
1
‌
US Patent 9912323 Radiation hardened structured ASIC platform with compensation of delay for temperature and voltage variations for multiple redundant temporal voting latch technology
1
‌
US Patent 9973329 Circuit and method for creating additional data transitions
1
‌
US Patent 10217522 Fast magnetoelectric device based on current-driven domain wall propagation
1
...
Patent Primary Examiner
‌
Kurtis R Bahr
1
CPC Code
‌
H01L 2027/11838
1
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H01L 27/11807
1
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G06F 7/501
1
Patent abstract

A new class of multiplier cells (analog or digital) is derived from a 1-bit full adder and an AND gate. The 1-bit full adder is derived from first and second majority gates. The multiplier cell can also be implemented with a combination of two majority gates with majority and AND functions integrated in each of them. The two majority gates are coupled. Each of the first and second majority logic gates comprise a capacitor with non-linear polar material. The first and second majority gates receive the two inputs A and B that are to be multiplied. Other inputs received by the first and second majority gates are carry-in input, a sum-in input, and a bias voltage. The bias voltage is a negative voltage, which produces an integrated AND function in conjunction with a majority function. The second majority gate receives additional inputs, which are inverted output of the first majority gate.

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