US Patent 11856790 Ferroelectric capacitors
Patent 11856790 was granted and assigned to Micron Technology on December, 2023 by the United States Patent and Trademark Office.
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US Patent 11856790 Ferroelectric capacitors
Article
Patent abstract
A method used in forming an electronic component comprising conductive material and ferroelectric material comprises forming a non-ferroelectric metal oxide-comprising insulator material over a substrate. A composite stack comprising at least two different composition non-ferroelectric metal oxides is formed over the substrate. The composite stack has an overall conductivity of at least 1×10
Infobox
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ashonita A. Chavan0
Durai Vishak Nirmal Ramaswamy0
Manuj Nahar0
Date of Patent
December 26, 2023
0Patent Application Number
180725460
Date Filed
November 30, 2022
0Patent Citations
Patent Primary Examiner
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