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US Patent 11856683 High efficiency plasma creation system and method
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Is a
Patent
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Date Filed
December 27, 2021
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Date of Patent
December 26, 2023
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Patent Application Number
17773819
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Patent Citations
US Patent 10670960 Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
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US Patent 11501956 Semiconductor reaction chamber showerhead
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US Patent 9462669 Plasma confinement device
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US Patent 10720350 Etch-resistant coating on sensor wafers for in-situ measurement
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Patent Inventor Names
Boaz Weinfeld
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Oded Gour Lavie
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Doron Weinfeld
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11856683
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Patent Primary Examiner
Srinivas Sathiraju
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