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US Patent 11854785 Package structure for heat dissipation

Patent 11854785 was granted and assigned to Taiwan Semiconductor Manufacturing Company on December, 2023 by the United States Patent and Trademark Office.

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
118547851
Patent Inventor Names
Ming-Fa Chen1
Chen-Hua Yu1
Sung-Feng Yeh1
Date of Patent
December 26, 2023
1
Patent Application Number
178386481
Date Filed
June 13, 2022
1
Patent Citations
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US Patent 9372206 Testing of semiconductor chips with microbumps
1
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US Patent 9425126 Dummy structure for chip-on-wafer-on-substrate
1
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US Patent 9443783 3DIC stacking device and method of manufacture
1
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US Patent 8941233 Integrated circuit package with inter-die thermal spreader layers
1
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US Patent 8993380 Structure and method for 3D IC package
1
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US Patent 9209166 Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies and stacked semiconductor devices
1
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US Patent 9281254 Methods of forming integrated circuit package
1
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US Patent 9299649 3D packages and methods for forming the same
1
...
Patent Primary Examiner
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Elias Ullah
1
CPC Code
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H01L 24/08
1
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H01L 24/80
1
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H01L 24/94
1
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H01L 2224/0557
1
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H01L 2224/05611
1
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H01L 2224/05644
1
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H01L 2224/05647
1
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H01L 2224/08137
1
...
Patent abstract

A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.

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