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US Patent 11841764 Circuit and method for reading ECC from memory

Patent 11841764 was granted and assigned to Infineon Technologies on December, 2023 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Infineon Technologies
Infineon Technologies
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Current Assignee
Infineon Technologies
Infineon Technologies
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
118417640
Patent Inventor Names
Yuichi Ise0
Nobuaki Hata0
Clifford Zitlaw0
Date of Patent
December 12, 2023
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Patent Application Number
176987290
Date Filed
March 18, 2022
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Patent Citations
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US Patent 7549001 Digital RAM memory circuit with an expanded command structure
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US Patent 9965387 Memory devices having embedded hardware acceleration and corresponding methods
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Patent Primary Examiner
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Guy J Lamarre
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CPC Code
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G06F 3/0679
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G06F 3/0656
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G06F 3/0619
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G06F 11/1068
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G06F 11/1048
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Patent abstract

In an embodiment, a method includes: receiving, via control lines of a parallel interface of a memory device, a first command and a first read command including one or more bits indicative of a first selection that causes a selector circuit to select data from a data memory portion of the memory device; providing, via data lines of the parallel interface, first data from the data memory portion using the selector circuit, where the provided first data is associated with the first read command; receiving, via the control lines, a second command and a second read command including one or more bits indicative of a second selection that causes the selector circuit to select data from an ECC memory portion; and providing, via the data lines, first ECC values from the ECC memory portion using the selector circuit, where the first ECC values are associated with the first data.

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