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US Patent 11801510 Dielectric layers for digital microfluidic devices

Patent 11801510 was granted and assigned to Nuclera on October, 2023 by the United States Patent and Trademark Office.

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Is a
Patent
Patent

Patent attributes

Patent Applicant
Nuclera
Nuclera
Current Assignee
Nuclera
Nuclera
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11801510
Patent Inventor Names
Cristina Visani
Richard J. Paolini, Jr.
Date of Patent
October 31, 2023
Patent Application Number
18083053
Date Filed
December 16, 2022
Patent Citations
‌
US Patent 7170670 Electrophoretic medium and display with improved image stability
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US Patent 7328979 System for manipulation of a body of fluid
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US Patent 7547380 Droplet transportation devices and methods having a fluid surface
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US Patent 7641779 Method and apparatus for programmable fluidic processing
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US Patent 7715088 Electrophoretic display
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US Patent 7839564 Components and methods for use in electro-optic displays
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US Patent 7903322 Electro-phoretic display film, electro-phoretic display panel, and fabricating method thereof
‌
US Patent 9714463 Coatings for electrowetting and electrofluidic devices
...
Patent Primary Examiner
‌
J. Christopher Ball
Patent abstract

An electrowetting system is disclosed. The system includes electrodes configured to manipulate droplets of fluid in a microfluidic space. Each electrode is coupled to circuitry operative to selectively apply a driving voltage to the electrode. The system includes a dielectric stack including a first dielectric pair comprising a first layer having a first dielectric constant and a second layer having a second dielectric constant. The second dielectric constant is larger than the first dielectric constant. The dielectric stack includes a second dielectric pair comprising a third layer having a third dielectric constant and a fourth layer having a fourth dielectric constant. The fourth dielectric constant is larger than the third dielectric constant. A ratio of a thickness of the fourth layer to a thickness of the third layer (T

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