Patent attributes
A semiconductor storage device includes: a first conductive layer extending in a first direction; a second conductive layer that is disposed apart from the first conductive layer in a second direction intersecting the first direction, and extends in the first direction; a plurality of semiconductor layers provided between the first conductive layer and the second conductive layer and arranged in the first direction, each of which includes a first portion facing the first conductive layer, and a second portion facing the second conductive layer; a plurality of first memory cells provided between the first conductive layer and the semiconductor layers, respectively; and a plurality of second memory cells provided between the second conductive layer and the semiconductor layers, respectively. A gap is provided between the two semiconductor layers adjacent in the first direction.
