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US Patent 11784256 Semiconductor devices
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Patent
Date Filed
December 20, 2021
Date of Patent
October 10, 2023
Patent Application Number
17556001
Patent Citations
US Patent 8022439 Semiconductor device comprising gate electrode surrounding entire circumference of channel region and method for manufacturing the same
US Patent 9362397 Semiconductor devices
US Patent 9484423 Crystalline multiple-nanosheet III-V channel FETs
US Patent 9502518 Multi-channel gate-all-around FET
US Patent 9583567 III-V gate-all-around field effect transistor using aspect ratio trapping
US Patent 9601569 Semiconductor device having a gate all around structure
US Patent 9614068 Semiconductor device and method of fabricating the same
US Patent 9704836 Semiconductor package assembly
US Patent 9704863 Forming a hybrid channel nanosheet semiconductor structure
US Patent 10243040 Semiconductor device
•••
Patent Inventor Names
Soojin Jeong
Dong Il Bae
Geumjong Bae
Junggil Yang
Seungmin Song
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11784256
Patent Primary Examiner
Mohammed Shamsuzzaman
CPC Code
H01L 29/0847
H01L 29/42356
H01L 29/42392
H01L 29/66772
H01L 29/78618
H01L 29/78654
H01L 2029/7858
H01L 29/1025
H01L 29/7848
H01L 29/0653
•••
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