US Patent 11776994 SiC MOSFET with reduced channel length and high V

A silicon carbide MOSFET device and method for making thereof are disclosed. The silicon carbide MOSFET device comprises a substrate heavily doped with a first conductivity type and an epitaxial layer lightly doped with the first conductivity type. A body region of a second conductivity type opposite the first is formed in epitaxial layer and an accumulation mode region of the first conductivity type is formed in the body region and an inversion mode region of the second conductivity type formed in the body region. The accumulation mode region is located between the inversion mode region and a junction field effect transistor (JFET) region of the epitaxial layer.