Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hiromi Hayasaka
Shigekazu Tomai
Koki Yano
Masatoshi Shibata
Emi Kawashima
Date of Patent
September 26, 2023
Patent Application Number
15605779
Date Filed
May 25, 2017
Patent Citations
Patent Primary Examiner
Patent abstract
A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.
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