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US Patent 11768600 Computing reduction and prefix sum operations in memory

Patent 11768600 was granted and assigned to Micron Technology on September, 2023 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Micron Technology
Micron Technology
Current Assignee
Micron Technology
Micron Technology
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11768600
Patent Inventor Names
Jeremiah J. Willcock
Date of Patent
September 26, 2023
Patent Application Number
17208978
Date Filed
March 22, 2021
Patent Citations
‌
US Patent 7372715 Architecture and method for NAND flash memory
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US Patent 7400532 Programming method to reduce gate coupling interference for non-volatile memory
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US Patent 7406494 Method of generating a cycle-efficient bit-reverse index array for a wireless communication system
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US Patent 7447720 Method for finding global extrema of a set of bytes distributed across an array of parallel processing elements
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US Patent 7454451 Method for finding local extrema of a set of values for a parallel processing element
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US Patent 7457181 Memory device and method of operating the same
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US Patent 7535769 Time-dependent compensation currents in non-volatile memory read operations
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US Patent 7546438 Algorithm mapping, specialized instructions and architecture features for smart memory computing
...
Patent Primary Examiner
‌
Zhuo H Li
CPC Code
‌
G06F 3/065
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G06F 3/0673
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G11C 7/1006
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G06F 3/0608
Patent abstract

The present disclosure includes apparatuses and methods for computing reduction and prefix sum operations in memory. A number of embodiments include processing circuitry configured to compute a reduction operation on data stored in a group of memory cells by splitting the data into a plurality of elements, copying each of the plurality of elements into elements that are wider than before being copied, and performing a logical operation associated with the reduction operation on each of the copied elements.

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