US Patent 11764265 Nanosheet transistor with inner spacers

Patent

US Patent 10903317 Gate-all-around field effect transistors with robust inner spacers and methods

US Patent 10930795 Nanowire stack GAA device with inner spacer and methods for producing the same

US Patent 10943989 Gate to source/drain leakage reduction in nanosheet transistors via inner spacer optimization

US Patent 10679906 Method of forming nanosheet transistor structures with reduced parasitic capacitance and improved junction sharpness

US Patent 10756175 Inner spacer formation and contact resistance reduction in nanosheet transistors

US Patent 10818792 Nanosheet field-effect transistors formed with sacrificial spacers

US Patent 10861952 Methods of manufacturing gate-all-around (GAA) FETs through partial replacement of gate spacers

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US Patent 10269983 Stacked nanosheet field-effect transistor with air gap spacers

United States Patent and Trademark Office

David C Spalla

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