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US Patent 11755814 Method and apparatus for layout pattern selection
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Patent
Date Filed
January 10, 2020
Date of Patent
September 12, 2023
Patent Application Number
17422520
Patent Citations
US Patent 8336006 Mask-layout creating method, apparatus therefor, and computer program product
US Patent 10386726 Geometry vectorization for mask process correction
US Patent 10198550 SRAF insertion with artificial neural network
US Patent 11403564 Lithographic hotspot detection using multiple machine learning kernels
US Patent 7587704 System and method for mask verification using an individual mask error model
US Patent 8200468 Methods and system for lithography process window simulation
Patent Citations Received
US Patent 12019974 Geometric mask rule check with favorable and unfavorable zones
0
Patent Inventor Names
Wei-jie Chen
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11755814
Patent Primary Examiner
Leigh M. Garbowski
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