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US Patent 11710729 Wafer bonding in fabrication of 3-dimensional NOR memory circuits

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Is a
Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
117107290
Date of Patent
July 25, 2023
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Patent Application Number
174708610
Date Filed
September 9, 2021
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Patent Citations
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US Patent 10373956 Gated bipolar junction transistors, memory arrays, and methods of forming gated bipolar junction transistors
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US Patent 10622377 3-dimensional NOR memory array with very fine pitch: device and method
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US Patent 10651153 Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding
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US Patent 10692874 3-dimensional NOR string arrays in segmented stacks
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US Patent 7307308 Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
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US Patent 7489002 Memory having a vertical transistor
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US Patent 7524725 Vertical transistor of semiconductor device and method for forming the same
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US Patent 7612411 Dual-gate device and method
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...
Patent Primary Examiner
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Ali Naraghi
0

A memory array and single-crystal circuitry are provided by wafer bonding (e.g., adhesive wafer bonding or anodic wafer bonding) in the same integrated circuit and interconnected by conductors of a interconnect layer. Additional circuitry or memory arrays may be provided by additional wafer bonds and electrically connected by interconnect layers at the wafer bonding interface. The memory array may include storage or memory transistors having single-crystal epitaxial silicon channel material.

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