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US Patent 11706929 Memory cells
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Is a
Patent
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Current Assignee
Micron Technology
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Date Filed
December 23, 2021
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Date of Patent
July 18, 2023
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Patent Applicant
Micron Technology
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Patent Application Number
17561579
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Patent Citations
US Patent 7558097 Memory having bit line with resistor(s) between memory cells
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US Patent 7180141 Ferroelectric capacitor with parallel resistance for ferroelectric memory
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US Patent 7304339 Passivation structure for ferroelectric thin-film devices
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US Patent 7378286 Semiconductive metal oxide thin film ferroelectric memory transistor
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US Patent 7408212 Stackable resistive cross-point memory with schottky diode isolation
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US Patent 7525830 Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell
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US Patent 8796085 Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication
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US Patent 8969170 Method of forming a semiconductor structure including a metal-insulator-metal capacitor
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US Patent 9076686 Field effect transistor constructions and memory arrays
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US Patent 9159829 Recessed transistors containing ferroelectric material
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•••
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11706929
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Patent Primary Examiner
Nikolay K Yushin
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CPC Code
H01L 27/11507
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H01L 27/10805
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H01L 28/40
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H01L 28/75
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H01L 28/90
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H01L 28/55
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H01G 4/008
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H01G 4/08
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H01G 4/33
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H01G 4/40
0
•••
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