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US Patent 11682558 Fabrication of back-end-of-line interconnects
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Patent
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Date Filed
September 22, 2021
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Date of Patent
June 20, 2023
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Patent Application Number
17481981
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Patent Citations
US Patent 9786503 Method for increasing pattern density in self-aligned patterning schemes without using hard masks
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US Patent 9799534 Application of titanium-oxide as a patterning hardmask
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US Patent 9934970 Self aligned pattern formation post spacer etchback in tight pitch configurations
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US Patent 10163633 Non-mandrel cut formation
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US Patent 10256320 Vertical field-effect-transistors having a silicon oxide layer with controlled thickness
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US Patent 10249496 Narrowed feature formation during a double patterning process
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US Patent 10354873 Organic mandrel protection process
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US Patent 9748110 Method and system for selective spacer etch for multi-patterning schemes
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US Patent 9773676 Lithography using high selectivity spacers for pitch reduction
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11682558
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Patent Primary Examiner
Shamim Ahmed
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