US Patent 11677017 Quantum well stacks for quantum dot devices

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a (111) silicon substrate, a (111) germanium quantum well layer above the substrate, and a plurality of gates above the quantum well layer. In some embodiments, a quantum dot device may include a silicon substrate, an insulating material above the silicon substrate, a quantum well layer above the insulating material, and a plurality of gates above the quantum well layer.