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US Patent 11675229 Display apparatus and backlight unit thereof

Patent 11675229 was granted and assigned to Seoul Semiconductor on June, 2023 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent
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Patent attributes

Patent Applicant
Seoul Semiconductor
Seoul Semiconductor
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Current Assignee
Seoul Semiconductor
Seoul Semiconductor
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116752290
Date of Patent
June 13, 2023
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Patent Application Number
177159180
Date Filed
April 7, 2022
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Patent Citations
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US Patent 9632355 Display device
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US Patent 10054733 Light emitting device package and display device including the same
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US Patent 10573793 Light emitting diode package and display apparatus including the same
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US Patent 11143913 Display apparatus and backlight unit thereof
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US Patent 11300830 Display apparatus and backlight unit thereof
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US Patent 7478929 Backlight unit
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US Patent 8123385 Planar light source device and display device
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US Patent 8507299 Light emitting diode package and manufacturing method thereof
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...
Patent Citations Received
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US Patent 12078886 Display apparatus and backlight unit thereof
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Patent Primary Examiner
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Thien M Le
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CPC Code
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G02F 1/133605
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G02F 1/133606
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G02F 1/133608
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G02F 1/133611
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G02F 1/133308
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G02B 6/0013
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G02F 1/133602
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G02B 6/0035
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...

A display apparatus including a frame, light emitting diode chips separated from each other and regularly arranged in a matrix on the frame, an optical part including a display panel and at least one of a phosphor sheet and an optical sheet, a light guide plate disposed between the frame and the optical part to cover the light emitting diode chips, at least one reflector disposed between the frame and the light guide plate to reflect at least part of light emitted from the light emitting diode chip to direct at least part of light emitted therefrom to the light guide plate, and a first-type electrode and a second-type electrode, in which at least one of the light emitting diode chips is a flip-chip type and includes a first-type semiconductor layer electrically connected to the first-type electrode and a second-type semiconductor layer electrically connected to the second-type electrode.

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