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US Patent 11635910 Memory device interface and method

Patent 11635910 was granted and assigned to Micron Technology on April, 2023 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
Micron Technology
Micron Technology
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Current Assignee
Micron Technology
Micron Technology
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116359100
Date of Patent
April 25, 2023
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Patent Application Number
171367280
Date Filed
December 29, 2020
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Patent Citations
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US Patent 10740033 Memory device sampling data using control signal transmitted through TSV
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US Patent 10877857 Memory system and method of operating the same
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US Patent 11386004 Memory device interface and method
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US Patent 10922607 Event driven and time hopping neural network
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US Patent 10528267 Command queue for storage operations
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US Patent 10621043 Systems, methods, and apparatuses for stacked memory
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US Patent 10628295 Computing mechanisms using lookup tables stored on memory
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US Patent 10649680 Dual-port non-volatile dual in-line memory modules
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Patent Citations Received
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US Patent 11989141 Neuromorphic memory device and method
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Patent Primary Examiner
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Fernando Hidalgo
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CPC Code
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G11C 5/04
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G11C 7/1006
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G11C 2029/1206
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G11C 5/063
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G11C 29/1201
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G11C 5/025
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G06F 3/0604
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G06F 3/0655
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Apparatus and methods are disclosed, including memory devices and systems. In an example, a memory module can include a first stack of at least eight memory die including four pairs of memory die, each pair of the four pairs of memory die associated with an individual memory rank of four memory ranks of the memory module, a memory controller configured to receive memory access commands and to access memory locations of the first stack, and a substrate configured to route connections between external terminations of the memory module and the memory controller.

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