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US Patent 11621293 Multi terminal device stack systems and methods

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Date Filed
October 1, 2018
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Date of Patent
April 4, 2023
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Patent Application Number
16148223
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Patent Citations
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US Patent 10038137 MRAM device and method for fabricating the same
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US Patent 10042588 Electronic device and operating method thereof
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US Patent 10043851 Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
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US Patent 10043967 Self-compensation of stray field of perpendicular magnetic elements
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US Patent 10062837 Method of forming magnetic patterns, and method of manufacturing magnetic memory devices
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US Patent 10115446 Spin transfer torque MRAM device with error buffer
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US Patent 10163479 Method and apparatus for bipolar memory write-verify
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US Patent 10134988 System for forming an electroactive layer
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US Patent 10186614 Semiconductor device and manufacturing method thereof
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US Patent 10008662 Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) process
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•••
Patent Inventor Names
Yuan-Tung Chin
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Elizabeth Dobisz
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Girish Jagtini
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Mustafa Pinarbasi
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Pradeep Manandhar
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Thomas Boone
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11621293
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Patent Primary Examiner
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Xiaoming Liu
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CPC Code
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H01L 27/222
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H01L 43/12
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H01L 43/02
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