Patent 11605633 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2023 by the United States Patent and Trademark Office.
A semiconductor device is provided. The semiconductor device includes a substrate and a semiconductor layer formed over a substrate. The semiconductor device further includes an isolation region covering the semiconductor layer and nanostructures formed over the semiconductor layer. The semiconductor layer further includes a gate stack wrapping around the nanostructures. In addition, the isolation region is interposed between the semiconductor layer and the gate stack.