US Patent 11568121 FinFET semiconductor device grouping

Patent 11568121 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2023 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Patent Applicant

Taiwan Semiconductor Manufacturing Company

Current Assignee

Taiwan Semiconductor Manufacturing Company

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11568121

Date of Patent

January 31, 2023

Patent Application Number

17226428

Date Filed

April 9, 2021

Patent Citations

‌

US Patent 10535774 Modular memory-like layout for finFET analog designs

Patent Citations Received

‌

US Patent 11989498 FinFET semiconductor device grouping

Patent Primary Examiner

CPC Code

...

A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.