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US Patent 11562908 Dielectric structure to prevent hard mask erosion

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Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11562908
Date of Patent
January 24, 2023
Patent Application Number
16860423
Date Filed
April 28, 2020
Patent Citations
‌
US Patent 10109583 Method for creating alternate hardmask cap interconnect structure with increased overlay margin
‌
US Patent 10262890 Method of forming silicon hardmask
Patent Primary Examiner
‌
Hsien-Ming Lee

A novel dielectric cap structure for VTFET device fabrication is provided. In one aspect, a method of forming a VTFET device includes: patterning fins in a substrate using fin hardmasks, including a first fin(s) and a second fin(s); depositing a liner over the fins and the fin hardmasks; selectively forming first hardmask caps on top of the fin hardmasks/liner over the first fin(s); forming first bottom source and drain at a base of the first fin(s) while the fin hardmasks/liner over the first fin(s) are preserved by the first hardmask caps; selectively forming second hardmask caps on top of the fin hardmasks/liner over the second fin(s); and forming second bottom source and drains at a base of the second fin(s) while the fin hardmasks/liner over the second fin(s) are preserved by the second hardmask caps. A device structure is also provided.

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