US Patent 11532755 Oxide semiconductor film and semiconductor device
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Patent Inventor Names
Akihisa Shimomura0
Junichi Koezuka0
Kenichi Okazaki0
Shunpei Yamazaki0
Yasumasa Yamane0
Yuhei Sato0
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US Patent 11532755 Oxide semiconductor film and semiconductor device
Article
To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.
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Patent Jurisdiction
Patent Number
115327550
Date of Patent
December 20, 2022
0Patent Application Number
171207740
Date Filed
December 14, 2020
0Patent Citations
Patent Primary Examiner
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