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US Patent 11495470 Method of enhancing etching selectivity using a pulsed plasma

Patent 11495470 was granted and assigned to Applied Materials on November, 2022 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
1

Patent attributes

Patent Applicant
Applied Materials
Applied Materials
1
Current Assignee
Applied Materials
Applied Materials
1
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
114954701
Patent Inventor Names
Iljo Kwak1
Sean Kang1
Taehwan Lee1
Rajinder Dhindsa1
Kenji Takeshita1
Hailong Zhou1
Date of Patent
November 8, 2022
1
Patent Application Number
172448731
Date Filed
April 29, 2021
1
Patent Citations
‌
US Patent 10063062 Method of detecting plasma discharge in a plasma processing system
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US Patent 10074518 Apparatus for controlled overshoot in a RF generator
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US Patent 10085796 Bipolar electrosurgical cutter with position insensitive return electrode contact
1
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US Patent 10090191 Selective plasma etching method of a first region containing a silicon atom and an oxygen atom
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US Patent 10102321 System, method and apparatus for refining radio frequency transmission system models
1
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US Patent 10109461 Plasma processing method
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US Patent 10115567 Plasma processing apparatus
1
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US Patent 10115568 Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
1
...
Patent Primary Examiner
‌
Allan W. Olsen
1

Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval.

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