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US Patent 11462565 Three-dimensional memory devices and fabrication methods thereof
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Patent
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Date Filed
November 21, 2020
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Date of Patent
October 4, 2022
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Patent Application Number
17100869
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Patent Citations
US Patent 10741576 Three-dimensional memory device containing drain-select-level air gap and methods of making the same
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US Patent 11004861 Three-dimensional memory devices and fabrication methods thereof
US Patent 10964718 Three-dimensional memory devices and fabrication methods thereof
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US Patent 11011540 Three-dimensional memory devices and fabrication methods thereof
US Patent 10431591 NAND memory arrays
US Patent 10700090 Three-dimensional flat NAND memory device having curved memory elements and methods of making the same
Patent Inventor Names
Li Hong Xiao
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11462565
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Patent Primary Examiner
Reema Patel
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CPC Code
H01L 27/11582
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H01L 27/1157
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H01L 27/11524
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H01L 27/11556
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