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US Patent 11462417 High pressure and high temperature anneal chamber

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Current Assignee
Applied Materials
Applied Materials
Date Filed
April 15, 2020
Date of Patent
October 4, 2022
Patent Applicant
Applied Materials
Applied Materials
Patent Application Number
16849604
Patent Citations
‌
US Patent 10234630 Method for creating a high refractive index wave guide
‌
US Patent 10049927 Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
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US Patent 10083834 Methods of forming self-aligned vias
‌
US Patent 10096516 Method of forming a barrier layer for through via applications
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US Patent 10179941 Gas delivery system for high pressure processing chamber
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US Patent 10224224 High pressure wafer processing systems and related methods
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US Patent 10643867 Annealing system and method
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US Patent 10675581 Gas abatement apparatus
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US Patent 10685830 Condenser system for high pressure processing system
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US Patent 10714331 Method to fabricate thermally stable low K-FinFET spacer
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11462417
Patent Primary Examiner
‌
Jarrett J Stark
CPC Code
‌
H01L 21/67109
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H01L 21/6723
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H01L 21/67098
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H01L 21/67248
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H01L 21/164
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H01L 21/02249
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H01L 21/02252
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H01L 21/02614
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H01L 21/324
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H01L 21/67017
•••

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