US Patent 11461261 Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a first string including a first memory cell transistor and a second memory cell transistor which are coupled in series, a first switch element, a first latch circuit coupled in series between a first end of the first string and a first end of the first switch element, and a second switch element and a third switch element coupled in parallel between a second end of the first switch element and a data bus.