US Patent 11450370 Ferroelectric field-effect transistor (FeFET) memory
Patent 11450370 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2022 by the United States Patent and Trademark Office.
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Patent Inventor Names
Perng-Fei Yuh0
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US Patent 11450370 Ferroelectric field-effect transistor (FeFET) memory
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A memory device includes a plurality of memory cells. Each memory cell includes a multi-gate FeFET that has a first source/drain terminal, a second source/drain terminal, and a gate with a plurality of ferroelectric layers configured such that each of the ferroelectric layers has a respective unique switching E-field.
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Current Assignee
Patent Jurisdiction
Patent Number
114503700
Date of Patent
September 20, 2022
0Patent Application Number
172291940
Date Filed
April 13, 2021
0Patent Primary Examiner
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