Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Umesh Mishra0
Xiang Liu0
Carl Joseph Neufeld0
David Michael Rhodes0
John Kirk Gritters0
Mo Wu0
Rakesh K. Lal0
Toshihide Kikkawa0
Date of Patent
May 3, 2022
0Patent Application Number
160702380
Date Filed
January 13, 2017
0Patent Citations Received
Patent Primary Examiner
A transistor includes a III-N channel layer; a III-N barrier layer on the III-N channel layer; a source contact and a drain contact, the source and drain contacts electrically coupled to the III-N channel layer; an insulator layer on the III-N barrier layer; a gate insulator partially on the insulator layer and partially on the III-N channel layer, the gate insulator including an amorphous Al
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