Patent attributes
Provided are an on-chip miniature electron source and a method for manufacturing the same. The on-chip miniature electron source includes: a thermal conductive layer; an insulating layer provided on the thermal conductive layer, where the insulating layer is made of a resistive-switching material, and at least one through hole is provided in the insulating layer; and at least one electrode pair provided on the insulating layer, where at least one electrode of the electrode pair is in contact with and connected to the thermal conductive layer via the through hole, where there is a gap between two electrodes of the electrode pair, and a tunnel junction is formed within a region of the insulating layer under the gap. Thus, heat generated by the on-chip micro electron source can be dissipated through the electrode and the thermal conductive layer, thereby significantly improving heat dissipation ability of the on-chip miniature electron source.
