Log in
Enquire now
‌

US Patent 11309409 Pseudo Schottky diode

Patent 11309409 was granted and assigned to Nexperia on April, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors

Contents

Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Nexperia
Nexperia
0
Current Assignee
Nexperia
Nexperia
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
113094090
Patent Inventor Names
Tim Böttcher0
Date of Patent
April 19, 2022
0
Patent Application Number
168898930
Date Filed
June 2, 2020
0
Patent Primary Examiner
‌
Syed I Gheyas
0
CPC Code
‌
H01L 29/165
0
‌
H01L 29/66356
0
‌
H01L 29/7391
0
‌
H01L 29/861
0
‌
H01L 29/66136
0

This disclosure relates to a semiconductor device and corresponding method of manufacturing the semiconductor device. The semiconductor device includes a MOS transistor device die and a SiGe diode. The SiGe diode is integrally arranged on the MOS transistor device die, so that the SiGe diode is electrically connected between a source connection and drain connection of the MOS transistor device die.

Timeline

No Timeline data yet.

Further Resources

Title
Author
Link
Type
Date
No Further Resources data yet.

References

Find more entities like US Patent 11309409 Pseudo Schottky diode

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
Open Query Tool
Access by API
Golden Query Tool
Golden logo

Company

  • Home
  • Press & Media
  • Blog
  • Careers
  • WE'RE HIRING

Products

  • Knowledge Graph
  • Query Tool
  • Data Requests
  • Knowledge Storage
  • API
  • Pricing
  • Enterprise
  • ChatGPT Plugin

Legal

  • Terms of Service
  • Enterprise Terms of Service
  • Privacy Policy

Help

  • Help center
  • API Documentation
  • Contact Us
By using this site, you agree to our Terms of Service.