Patent attributes
A capacitor includes: a semiconductor substrate; a first insulating layer disposed under the substrate; a first trench group disposed in the substrate and the first insulating layer, the first trench group includes two first trenches which penetrate through the substrate downward from an upper surface of the substrate and enter the first insulating layer, and bottoms of the two first trenches are communicated to form a first cavity structure located in the first insulating layer; a laminated structure disposed above the substrate, in the first trench group, and in the first cavity structure, the laminated structure includes m insulating layers and n conductive layers forming a structure that each insulating layer electrically isolates each conductive layer from each other; a first electrode layer electrically connected to all odd-numbered conductive layers; and a second electrode layer electrically connected to all even-numbered conductive layers.
