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US Patent 11264530 Light emitting diode (LED) devices with nucleation layer

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

1

Patent Number

Patent Inventor Names

Toni Lopez1

Isaac Wildeson1

Parijat Deb1

Robert Armitage1

Hee-Jin Kim1

Date of Patent

March 1, 2022

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Patent Application Number

167213861

Date Filed

December 19, 2019

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Patent Citations

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1

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Patent Primary Examiner

1

Patent abstract

Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

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