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US Patent 11257661 Plasma processing apparatus

Patent 11257661 was granted and assigned to Hitachi on February, 2022 by the United States Patent and Trademark Office.

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Patent
Patent

Patent attributes

Patent Applicant
Hitachi
Hitachi
Current Assignee
Hitachi
Hitachi
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11257661
Patent Inventor Names
Shigeru Shirayone0
Kazuyuki Ikenaga0
Masahiro Sumiya0
Masaki Ishiguro0
Tomoyuki Tamura0
Date of Patent
February 22, 2022
Patent Application Number
14788759
Date Filed
June 30, 2015
Patent Citations Received
‌
US Patent 11387110 Plasma processing apparatus and plasma processing method
0
‌
US Patent 12112925 Plasma processing apparatus
0
Patent Primary Examiner
‌
Aiden Lee
Patent abstract

A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

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