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US Patent 11239823 Quartz MEMS piezoelectric resonator for chipscale RF antennae

Patent 11239823 was granted and assigned to Hrl Laboratories, Llc on February, 2022 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Hrl Laboratories, Llc
Hrl Laboratories, Llc
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Current Assignee
Hrl Laboratories, Llc
Hrl Laboratories, Llc
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
112398230
Patent Inventor Names
Randall L. Kubena0
Walter S. Wall0
Date of Patent
February 1, 2022
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Patent Application Number
159656520
Date Filed
April 27, 2018
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Patent Citations
‌
US Patent 10308505 Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
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US Patent 10031191 Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
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US Patent 10126376 Quartz magnetometer having a quartz resonant plate with a broaden distal end for enhanced magnetic sensitivity
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US Patent 10175307 FM demodulation system for quartz MEMS magnetometer
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US Patent 10266398 ALD metal coatings for high Q MEMS structures
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US Patent 10389392 High-Q quartz-based inductor array for antenna matching
Patent Citations Received
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US Patent 11988727 Magnetostrictive MEMS magnetic gradiometer
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US Patent 11567147 Phononic comb enhanced gradiometers
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US Patent 11606098 Comb enhanced oscillator with AM-to-PM noise suppression
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US Patent 11747512 Phononic comb enhanced MEMS gravity gradiometers
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US Patent 11863194 Phononic comb enhanced atomic clock
0
Patent Primary Examiner
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J. San Martin
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Patent abstract

A RF antenna comprises a quartz resonator having electrodes disposed thereon with a magnetostrictive film disposed on the quartz resonator either on, partially under or adjacent at least one of the electrodes. A RF antenna having a magnetostrictive film may be made by patterning selected portions of a top surface of the quartz wafer for deposition of electrode metal and deposition of the magnetostrictive film and depositing the electrode metal and the magnetostrictive film; temporarily bonding the quartz wafer to a handle wafer; thinning the quartz wafer to a desired thickness; etching the quartz wafer to define the outlines of at least one quartz resonator bearing the electrode metal and the magnetostrictive film; patterning selected portions of a bottom surface the at least one quartz resonator for deposition of electrode metal and at least one bond pad and depositing the electrode metal and the at least one bond pad; bonding the at least one quartz resonator to a substrate wafer; and releasing the at least one quartz resonator from the handle wafer.

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