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US Patent 11239315 Dual trench isolation structures

Patent 11239315 was granted and assigned to GlobalFoundries on February, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Current Assignee
GlobalFoundries
GlobalFoundries
Date Filed
February 3, 2020
Date of Patent
February 1, 2022
Patent Applicant
GlobalFoundries
GlobalFoundries
Patent Application Number
16780494
Patent Citations
‌
US Patent 10290712 LDMOS finFET structures with shallow trench isolation inside the fin
‌
US Patent 10084093 Low resistance conductive contacts
‌
US Patent 10236367 Bipolar semiconductor device with silicon alloy region in silicon well and method for making
‌
US Patent 10453747 Double barrier layer sets for contacts in semiconductor device
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11239315
Patent Primary Examiner
‌
Fazli Erdem

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