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US Patent 11188703 Integrated circuit, system, and method of forming the same

Patent 11188703 was granted and assigned to Taiwan Semiconductor Manufacturing Company on November, 2021 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
111887030
Patent Inventor Names
Jung-Chan Yang0
Hui-Zhong Zhuang0
Pochun Wang0
Sang-Chi Huang0
Date of Patent
November 30, 2021
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Patent Application Number
165791380
Date Filed
September 23, 2019
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Patent Citations Received
‌
US Patent 12001772 Ultra-short-height standard cell architecture
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Patent Primary Examiner
‌
Nha T Nguyen
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Patent abstract

A method of forming an integrated circuit includes generating a first and a second standard cell layout design, generating a first set of cut feature layout patterns extending in a first direction, and manufacturing the integrated circuit based on the first or second standard cell layout design. Generating the first standard cell layout design includes generating a first set of conductive feature layout patterns extending in the first direction, and overlapping a first set of gridlines extending in the first direction. Generating the second standard cell layout design includes generating a second set of conductive feature layout patterns extending in the first direction and overlapping a second set of gridlines extending in the first direction. A side of a first cut feature layout pattern extending in the first direction is aligned with a first gridline of the first or second set of gridlines.

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