Patent attributes
A semiconductor device includes: a semiconductor base having a first main surface and a second main surface which are opposite to each other; a first main electrode formed on the first main surface and electrically connected to the semiconductor base; a first control electrode pad formed on the first main surface; a first insulating film interposed between the semiconductor base and the first control electrode pad; a peripheral withstand voltage holding structure formed in a peripheral region surrounding the first main electrode and the first control electrode pad on the first main surface; a second main electrode formed on the second main surface and electrically connected to the semiconductor base; a second control electrode pad formed on the second main surface; and a second insulating film interposed between the semiconductor base and the second control electrode pad, wherein the second control electrode pad is surrounded by the second main electrode.
