Patent 11183492 was granted and assigned to Skorpios Technologies on November, 2021 by the United States Patent and Trademark Office.
Fabricating a multilevel composite semiconductor structure includes providing a first substrate comprising a first material; dicing a second substrate to provide a plurality of dies; mounting the plurality of dies on a third substrate; joining the first substrate and the third substrate to form a composite structure; and joining a fourth substrate and the composite structure.