US Patent 11177135 Mask member and method for producing semiconductor device

Patent 11177135 was granted and assigned to Toshiba Memory Corporation on November, 2021 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Patent Applicant

Toshiba Memory Corporation

Current Assignee

Toshiba Memory Corporation

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

11177135

Date of Patent

November 16, 2021

Patent Application Number

16283570

Date Filed

February 22, 2019

Patent Primary Examiner

‌

Jiong-Ping Lu

Patent abstract

A mask member contains tungsten (W), boron (B), and carbon (C). The mask member includes a first portion in contact with a process film, the first portion, in which the terms of the composition ratio, which correspond to boron and carbon, are larger than the term of the composition ratio, which corresponds to tungsten, and a second portion in which the term of the composition ratio, which corresponds to tungsten, is larger than the terms of the composition ratio, which correspond to carbon and boron.