US Patent 11177000 Non-volatile memory and operating method thereof

An operating method of a non-volatile memory includes: generating a first programming pulse with a first time period to a target memory cell in a memory array; reading and verifying whether a threshold voltage of the target memory cell reaches a target voltage level; and generating a second programming pulse with a second time period to the target memory cell when the threshold voltage of the target memory cell does not reach the target voltage level, wherein the second time period is longer than the first time period.