US Patent 11176974 Memory device with shared amplifier circuitry

In some examples, a memory device may have at least a first and a second memory array. In some cases, a portion of the bit cells of the first memory array may be coupled to first PMOS-follower circuitry and to second PMOS-follower circuitry. A portions of the bit cells of the second memory array may also be coupled to the second PMOS-follower circuitry and to third PMOS-follower circuitry. Additionally, in some cases, the portion of bit cells of both the first memory array and the second memory array may be coupled to shared preamplifier circuitry.